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PD - 90887E
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number IRHM7054 IRHM3054 IRHM4054 IRHM8054 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.027 0.027 0.027 0.027 ID 35*A 35*A 35*A 35*A
IRHM7054 JANSR2N7394 60V, N-CHANNEL REF: MIL-PRF-19500/603
RAD Hard HEXFET TECHNOLOGY
TM (R)
QPL Part Number
JANSR2N7394 JANSF2N7394 JANSG2N7394 JANSH2N7394
TO-254AA
International Rectifier's RADHard HEXFET(R) technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page *Current is limited by package 35* 30 140 150 1.2 20 500 35 15 3.5 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063 in.(1.6mm) from case for 10s) 9.3 (Typical )
g
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1
08/30/04
IRHM7054, JANSR2N7394
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
60 -- -- -- 2.0 12 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.053 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.027 0.030 4.0 -- 25 250 100 -100 200 60 75 27 100 75 75 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 30A A VGS = 12V, ID = 35A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 30A A VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 30V VDD =30V, ID = 35A VGS =12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns nH
Measured from Drain lead (6mm /0.25in from package) to Source lead (6mm /0.25in. from
Package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
4100 2000 560
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 35* 140 1.4 280 2.2
Test Conditions
A
V nS C Tj = 25C, IS = 35A, VGS = 0V A Tj = 25C, IF = 35A, di/dt 100A/s VDD 50V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
R thJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink
Min Typ Max Units
-- -- -- -- 0.83 -- 48 0.21 --
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHM7054, JANSR2N7394
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (TO-254AA) Diode Forward Voltage A Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 60 2.0 -- -- -- -- -- -- -- 4.0 100 -100 25 0.027 0.027 1.4 60 1.25 -- -- -- -- -- -- -- 4.5 100 -100 50 0.04 0.04 1.4 V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 48V, VGS = 0V VGS = 12V, ID = 30A VGS = 12V, ID = 30A VGS = 0V, IS = 35A
1. Part numbers IRHM7054 ( JANSR2N7394 ), IRHM3054 ( JANSF2N7394 ), IRHM4054 ( JANSG2N7394 ) 2. Part number IRHM8054 ( JANSH2N7394 )
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion I Br LET MeV/(mg/cm2)) 59.9 36.8 Energy (MeV) 345 305 Range VDS(V) (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 32.8 60 60 45 40 30 39 40 35 30 25 20
80 60 VDS 40 20 0 0 -5 -10 VGS -15 -20
BR I
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM7054, JANSR2N7394
Pre-Irradiation
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
5.0V
10 1 10
20s PULSE WIDTH TJ = 25 C
100
5.0V
10 1 10
20s PULSE WIDTH TJ = 150 C
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 50A
I D , Drain-to-Source Current (A)
2.0
TJ = 25 C TJ = 150 C
1.5
100
1.0
0.5
10
V DS = 25V 20s PULSE WIDTH 5 6 7 8 9 10 11 12
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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Pre-Irradiation
IRHM7054, JANSR2N7394
8000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 35A VDS = 48V VDS = 30V
C, Capacitance (pF)
6000
16
Ciss
4000
12
Coss
2000
8
Crss
0
4
1
10
100
0
FOR TEST CIRCUIT SEE FIGURE 13
0 40 80 120 160 200
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
TJ = 150 C
I D , Drain Current (A)
TJ = 25 C
100
100us
1ms 10
10
10ms
1 0.4
V GS = 0 V
1.0 1.6 2.2 2.8 3.4 4.0
1
TC = 25 C TJ = 150 C Single Pulse
1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHM7054, JANSR2N7394
Pre-Irradiation
50
VDS
RD
LIMITED BY PACKAGE
40
VGS RG VGS
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
I D , Drain Current (A)
-VDD
30
20
Fig 10a. Switching Time Test Circuit
VDS 90%
10
0
25
50
75
100
125
150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1 D = 0.50
Thermal Response (Z thJC )
0.20 0.1 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC
0.01
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHM7054, JANSR2N7394
EAS , Single Pulse Avalanche Energy (mJ)
1200
TOP BOTTOM
15V
1000
ID 16A 22A 35A
VDS
L
DRIVER
800
600
RG
D.U.T
IAS tp
+ - VDD
A
VGS 20V
400
0.01
Fig 12a. Unclamped Inductive Test Circuit
200
0
25
V(BR)DSS tp
Starting T , Junction Temperature( C) J
50
75
100
125
150
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
VG
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHM7054, JANSR2N7394
Pre-Irradiation
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
Foot Notes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 0.9mH Peak IL = 35A, VGS =12V A ISD 35A, di/dt 150A/s, VDD 60V, TJ 150C 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-254AA
3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 0.12 [.005] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040]
17.40 [.685] 16.89 [.665]
1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B
C
14.48 [.570] 12.95 [.510]
0.84 [.033] MAX.
3X
3.81 [.150]
2X
1.14 [.045] 0.89 [.035] 0.36 [.014] BA
3.81 [.150]
NOT ES :
1. 2. 3. 4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/04
8
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